General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
Features
• 6.8A, 200V, RDS(on)= 0.36â¦@VGS= 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers
|