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FQPF11P06 데이터시트

부품명FQPF11P06 Fairchild
Fairchild Semiconductor Fairchild
상세내역60V P-Channel MOSFET
FQPF11P06 image

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

• -8.6A, -60V, RDS(on) = 0.175Ω @VGS = -10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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FQPF11P06 관련 기타 제조 업체 검색

S4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET™ MOSFET View STMicroelectronics
AO3460 60V N-Channel MOSFET View Unspecified
AO4440 60V N-Channel MOSFET View Unspecified
AO4611 60V Dual P + N-Channel MOSFET View Unspecified
AOD442 60V N-Channel MOSFET View Unspecified
AO4852 60V Dual N-Channel MOSFET View Unspecified
FQP50N06 60V N-Channel MOSFET View Tiger Electronic
AO3422 N-Channel 60V (D-S) MOSFET View Unspecified
AOD4130 60V N-Channel MOSFET View Unspecified
AO3460_13 60V N-Channel MOSFET View Alpha and Omega Semiconductor

Key Word

System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

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