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FQPF12N60C 데이터시트

부품명FQPF12N60C Fairchild
Fairchild Semiconductor Fairchild
상세내역600V N-Channel MOSFET
FQPF12N60C Datasheet PDF : FQPF12N60C pdf     

Image Info : [Fairchild] FQP12N60C

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high
efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 12A, 600V, RDS(on)= 0.65Ω@VGS= 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

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FQPF12N60C 관련 기타 제조 업체 검색

FQPF12N60C 600V N-Channel MOSFET

Other parts:FQP12N60C
FQPF12N60C View Unspecified
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