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FQPF4N90C 데이터시트

부품명FQPF4N90C Fairchild
Fairchild Semiconductor Fairchild
상세내역900V N-Channel MOSFET
FQPF4N90CT image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

• 4A, 900V, RDS(on) = 4.2Ω @VGS = 10 V
• Low gate charge ( typical 17nC)
• Low Crss ( typical 5.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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FQPF4N90C 관련 기타 제조 업체 검색

STW6NB90 N - CHANNEL 900V - 1.7Ω - 6.3A - TO-247 PowerMESH™ MOSFET View STMicroelectronics
STU8NB90 N-CHANNEL 900V - 0.7Ω - 8.9A - Max220 PowerMESH MOSFET View STMicroelectronics
STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET View STMicroelectronics
STP5NB90 N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET View STMicroelectronics
TSM9N90 900V N-Channel Power MOSFET View TSC Corporation
STP6NB90 N - CHANNEL 900V - 1.7Ω - 5.8A - TO-220/TO-220FP PowerMESH™ MOSFET View STMicroelectronics
2SK2677 N-Channel Enhancement type HVX-2 Series Power MOSFET 900V 10A View Shindengen
STW15NK90Z N-CHANNEL 900V - 0.40Ω -15ATO-247 Zener-Protected SuperMESH™ MOSFET View STMicroelectronics
STY16NA90 N - CHANNEL 900V - 0.5 Ω - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET View STMicroelectronics
STW6NC90Z N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH™III MOSFET View STMicroelectronics

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