datasheetq language:
>>> Fairchild >>> FQPF4N90C 데이터시트

FQPF4N90C 데이터시트

부품명FQPF4N90C Fairchild
Fairchild Semiconductor Fairchild
상세내역900V N-Channel MOSFET
FQPF4N90C Datasheet PDF : FQPF4N90C pdf     

Image Info : [Fairchild] FQPF4N90CT

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

• 4A, 900V, RDS(on) = 4.2Ω @VGS = 10 V
• Low gate charge ( typical 17nC)
• Low Crss ( typical 5.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Share Link : Fairchild

Searches related to FQPF4N90C description

Language : English   日本語   русский   简体中文   español
@ 2015 - 2017  [ Home  ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]