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FQPF6N80 데이터시트

부품명FQPF6N80 Fairchild
Fairchild Semiconductor Fairchild
상세내역800V N-Channel MOSFET
FQPF6N80 Datasheet PDF : FQPF6N80 pdf     

Image Info : [Fairchild] FQPF6N80

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 3.3A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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