Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

FQPF7N60 데이터시트

부품명FQPF7N60 KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
상세내역600V N-Channel MOSFET
PDF DOWNLOAD     
FQPF7N60 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply

Features
• 4.3A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

Page Links : 1  2  3  4  5  6  7 
Share Link : KERSEMI

HOME 'FQPF7N60' Search


FQPF7N60 관련 기타 제조 업체 검색

FQPF7N60 600V N-Channel MOSFET

Other parts:FQA12N60, FQA19N60, FQA24N60, FQA7N60, FQAF12N60...
View Fairchild Semiconductor
Fairchild Semiconductor  


Searches related to FQPF7N60 description

[ Fairchild FQA12N60 ]   [ Fairchild FQA19N60 ]   [ Fairchild FQA24N60 ]   [ Fairchild FQA7N60 ]   [ Fairchild FQAF12N60 ]   [ Fairchild FQAF19N60 ]   [ Fairchild FQB12N60 ]   [ Fairchild FQB1N60 ]   [ Fairchild FQB4N60 ]   [ Fairchild FQB5N60 ]  
Language : English   日本語   русский   简体中文   español
@ 2015 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]