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FQPF7N60 데이터시트

Kersemi Electronic Co., Ltd. KERSEMI
상세내역600V N-Channel MOSFET
FQPF7N60 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply

• 4.3A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


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FQPF7N60 관련 기타 제조 업체 검색

FQPF7N60 600V N-Channel MOSFET

Other parts:FQA19N60, FQA24N60, FQA7N60, FQAF12N60, FQAF19N60...
View Fairchild Semiconductor  Fairchild Semiconductor

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