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FQPF8N60CFT 데이터시트

부품명FQPF8N60CFT Fairchild
Fairchild Semiconductor Fairchild
상세내역600V N-Channel MOSFET
FQPF8N60CFT Datasheet PDF : FQPF8N60CFT pdf     
FQPF8N60CF image

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

• 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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