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G8370-81 Datasheet

Part Name Description Manufacturer
G8370-81 InGaAs PIN photodiode Hamamatsu
Hamamatsu Photonics Hamamatsu
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G8370-85 image

Low PDL (Polarization Dependence Loss)

InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Features
Low PDL (Polarization Dependence Loss)
Low noise, low dark current
Large active area
Various active area sizes available

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