DESCRIPTION
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.

FEATURES
• Compact 4-pin package
• Current Transfer Ratio: 600% minimum (at IF = 1 mA)
• High isolation voltage between input and output (5300
   VRMS)
• UL recognized (File # E90700)

APPLICATIONS
• Power Supply Monitors
• Relay Contact Monitor
• Telephone/Telegraph Line Receiver
• Twisted Pair Line Receiver
• Digital Logic/Digital Logic