The HEXFETïtechnology is the key to International Rectifierâs advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest âState of the Artâ design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
Features:
â Repetitive Avalanche Ratings
â Dynamic dv/dt Rating
â Hermetically Sealed
â Simple Drive Requirements
â Ease of Paralleling
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