Description
Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Benefits
â Advanced Process Technology
â Ultra Low On-Resistance
â Dynamic dv/dt Rating
â 175°C Operating Temperature
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax
Typical Applications
â Industrial Motor Drive
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