FEATURES
⢠Low Rds(on) ) at high voltage
⢠Improved Inductive ruggedness
⢠Excellent high voltage stability
⢠Fast switching times
⢠Rugged polysillcon gate cell structure
⢠Low Input capacitance
⢠Extended safe operating area
⢠Improved high temperature reliability
⢠TO-3 package (High voltage)
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