IRF253 Datasheet - New Jersey Semiconductor
Part Name
IRF253
Description
Other PDF
not available.
PDF
page
3 Pages
File Size
127.6 kB
MFG CO.
New Jersey Semiconductor
FEATURES
⢠Low Rds(on) ) at high voltage
⢠Improved Inductive ruggedness
⢠Excellent high voltage stability
⢠Fast switching times
⢠Rugged polysillcon gate cell structure
⢠Low Input capacitance
⢠Extended safe operating area
⢠Improved high temperature reliability
⢠TO-3 package (High voltage)
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Part Name
Description
PDF
MFG CO.
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