VDSS = 75V
RDS(on) = 3.8mΩ
ID = 160A

Description
This HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom ORing and low voltage Motor Drive Applications.

Features
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax