Description
This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
⢠Ultra Low On-Resistance
⢠175°C Operating Temperature
⢠Fast Switching
⢠Repetitive Avalanche Allowed up to Tjmax
⢠Lead-Free
Typical Applications
⢠Industrial Motor Drive
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