Description
Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device.
Features
â Designed to support Linear Gate Drive Applications
â 175°C Operating Temperature
â Low Thermal Resistance Junction - Case
â Rugged Process Technology and Design
â Fully Avalanche Rated
â Lead-Free
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