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Part Name  

IRF520NL Datasheet

Part Name Description Manufacturer
IRF520NL HEXFET® Power MOSFET IR
International Rectifier IR
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IRF520NS image

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

• Advanced Process Technology
• Surface Mount (IRF520NS)
• Low-profile through-hole (IRF520NL)
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated

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