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IRF634 Datasheet

Part Name

IRF634

Fairchild Semiconductor

Description

Advanced Power MOSFET

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FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
♦ Lower RDS(ON): 0.327Ω (Typ.)

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