General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary,
planar, DMOS technology.
Features
⢠32A, 200V, RDS(on)= 0.085â¦@VGS= 10 V
⢠Low gate charge ( typical 95 nC)
⢠Low Crss ( typical 75 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
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