The IRFP360 and IRFP362 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera tion These are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits
The IRFP-types are supplied in the JEDEC TO-247 plastic package.
Features:
⢠Single pulse avalanche energy rated
⢠SOA ispower-dissipation /imited
⢠Nanosecond switching speeds
⢠Linear transfer characteristics
⢠High input impedance
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