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IRFS654B Datasheet

Part NameIRFS654B Fairchild
Fairchild Semiconductor Fairchild
Description250V N-Channel MOSFET
IRFS654B Datasheet PDF : IRFS654B pdf   
IRFS654 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

• 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


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