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Part Name  

IRG4RC10SDPBF Datasheet

Part Name Description Manufacturer
IRG4RC10SDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack IGBT IR
International Rectifier IR
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IRG4RC10SDPBF image

Features
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
    KHz PWM frequency in inverter drives, up to 4
    KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
    ultra-soft-recovery anti-parallel diodes for use
    in bridge configurations
• Industry standard TO-252AA package
• Lead-Free
   
Benefits
• Generation 4 IGBTs offer highest efficiencies
    available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
    IGBTs . Minimized recovery characteristics require
    less/no snubbing
• Lower losses than MOSFETs conduction and
    Diode losses
   

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