VDSS = 40V
RDS(on) = 0.008â¦
ID = 104AÂ
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
â Advanced Process Technology
â Surface Mount (IRL1104S)
â Low-profile through-hole (IRL1104L)
â 175°C Operating Temperature
â Fast Switching
â Fully Avalanche Rated
â Logic-Level Gate Drive
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