DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠Dynamic dV/dt Rating
⢠Repetitive Avalanche Rated
⢠Logic-Level Gate Drive
⢠RDS (on) Specified at VGS = 4 V and 5 V
⢠175°C Operating Temperature
⢠Compliant to RoHS Directive 2002/95/EC
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