Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
â Isolated Package
â High Voltage Isolation = 2.5KVRMS
â Sink to Lead Creepage Dist. 4.8mm
â Logic-Level Gate Drive
â RDS(ON) Specified at VGS = 4V & 5V
â Fast Switching
â Ease of paralleling
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