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IRLI640G Datasheet

Part NameIRLI640G IR
International Rectifier IR
DescriptionHEXFET Power MOSFET
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Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. 4.8mm
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● Fast Switching
● Ease of paralleling

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