VDS -55 V
RDS(ON) typ. @ VGS = -10V 93 mâ¦
RDS(ON) typ. @ VGS = -4.5V 150 mâ¦
Qg typ. 31 nC
TJ max 175 °C
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Features
â Advanced Process Technology
â Key Parameters Optimized for Class-D Audio Amplifier Applications
â Low RDSON for Improved Efficiency
â Low Qg and Qsw for Better THD and Improved Efficiency
â Low Qrr for Better THD and Lower EMI
â 175°C Operating Junction Temperature for Ruggedness
â Repetitive Avalanche Capability for Robustness and Reliability
â Multiple Package Options
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