BVDSS = 200 V
RDS(on) = 0.8 Ω
ID = 4.1 A
FEATURES
â Logic-Level Gate Drive
â Avalanche Rugged Technology
â Rugged Gate Oxide Technology
â Lower Input Capacitance
â Improved Gate Charge
â Extended Safe Operating Area
â Lower Leakage Current : 10 μA (Max.) @ VDS = 200V
â Lower RDS(ON) : 0.609Ω (Typ.)
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