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IRLU3303 Datasheet - International Rectifier

IRLU3303 Datasheet PDF International Rectifier

Part Name
IRLU3303

Other PDF
  not available.

page
10 Pages

File Size
128.3 kB

MFG CO.
IR
International Rectifier IR

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

• Logic-Level Gate Drive
• Ultra Low On-Resistance
• Surface Mount (IRLR3303)
• Straight Lead (IRLU3303)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated

 

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Part Name
Description
PDF
MFG CO.
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
Power MOSFET(VDSS= 40V RDS(on)= 0.004Ω ID= 162A)
Kersemi Electronic Co., Ltd.
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)
Vishay Semiconductors
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
Kersemi Electronic Co., Ltd.
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
Vishay Semiconductors
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Vishay Semiconductors
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Kersemi Electronic Co., Ltd.
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Vishay Semiconductors
Power MOSFET VDSS =55V, RDS(on) = 0.07 mohm, ID = 17 A
Transys Electronics Limited

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