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IS61LV25616AL Datasheet - Integrated Silicon Solution

IS61LV25616AL Datasheet PDF Integrated Silicon Solution

Part Name
IS61LV25616AL

Other PDF
  not available.

page
16 Pages

File Size
284.3 kB

MFG CO.
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.

FEATURES
• High-speed access time:
   — 10, 12 ns
• CMOS low power operation
• Low stand-by power:
   — Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available

 

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256K x 16 CMOS 3.3V Static RAM
Paradigm Technology
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256K x 16 Bit High-Speed CMOS Static RAM ( Rev : 2001 )
Samsung
256K x 16 Bit High-Speed CMOS Static RAM
Samsung
256K x 16, CMOS STATIC RAM
Mosel Vitelic Corporation

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