MFG CO.
Integrated Silicon Solution
DESCRIPTION
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.
FEATURES
• High-speed access time:
— 10, 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
Part Name
Description
PDF
MFG CO.
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256K x 16 CMOS 3.3V Static RAM
Paradigm Technology
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256K x 16 Bit High-Speed CMOS Static RAM ( Rev : 2001 )
Samsung
256K x 16 Bit High-Speed CMOS Static RAM
Samsung
256K x 16, CMOS STATIC RAM
Mosel Vitelic Corporation