VDSS = 1000V
ID25 = 12A
RDS(on) ⤠1.05Ω
trr ⤠250ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low
Intrinsic Rg, High dV/dt, Low trr
Features
⢠RF capable MOSFETs
⢠Double metal process for low gate resistance
⢠Rugged polysilicon gate cell structure
⢠Unclamped Inductive Switching (UIS) rated
⢠Low package inductance
  - easy to drive and to protect
⢠Fast intrinsic rectifier
Applications
⢠DC-DC converters
⢠Switched-mode and resonant-mode power supplies, >500kHz switching
⢠DC choppers
⢠13.5 MHz industrial applications
⢠Pulse generation
⢠Laser drivers
⢠RF amplifiers
Advantages
⢠Space savings
⢠High power density
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