K10A50D Datasheet PDF - Toshiba

K10A50D Datasheet - Toshiba

K10A50D Datasheet PDF Toshiba

Part Name

K10A50D

Description

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Other PDF

not available.

PDF

page

6 Pages

File Size

198.4 kB

MFG CO.

Toshiba

Toshiba

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en

• Low drain-source ON-resistance: RDS (ON)= 0.62 â¦(typ.)

• High forward transfer admittance: âªYfsâª= 5.0 S (typ.)

• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Page Link's: 1 2 3 4 5 6

Part Name

Description

PDF

MFG CO.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ï-MOSIV)

Unspecified

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ï-MOSV)

Unspecified

Field Effect Transistor Silicon N Channel MOS Type

New Jersey Semiconductor

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ï-MOSâ£)

Unspecified

N-channel MOS Type Silicon Field Effect Transistor

SANYO -> Panasonic

Field Effect Transistor Silicon N-Channel MOS Type

Unspecified

N channel MOS type silicon field effect transistor ( Rev : V2 )

SANYO -> Panasonic

N channel MOS type silicon field effect transistor

SANYO -> Panasonic

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ï-MOSVI)

Unspecified

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

SANYO -> Panasonic

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