K10A60D Datasheet - Toshiba
Part Name
K10A60D
Description
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not available.
PDF
page
6 Pages
File Size
147.1 kB
MFG CO.
Toshiba
• Low drain-source ON-resistance: RDS (ON)= 0.58 â¦(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
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Part Name
Description
PDF
MFG CO.
N-channel MOS Field Effect Transistor / High voltage switching applications.
NEC => Renesas Technology
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