K12A60D Datasheet PDF - Toshiba

K12A60D Datasheet - Toshiba

K12A60D Datasheet PDF Toshiba

Part Name

K12A60D

Description

Silicon N Channel MOS Type (Ï -MOSâ¦ ) Field Effect Transistor

Other PDF

not available.

PDF

page

6 Pages

File Size

175.1 kB

MFG CO.

Toshiba

Toshiba

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.45 â¦ (typ.)
• High forward transfer admittance: âªYfsâª = 7.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Page Link's: 1 2 3 4 5 6

Part Name

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MFG CO.

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