SUMMARY DESCRIPTION
The M29F100B is a 1 Mbit (128Kb x8 or 64Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F100B is fully backward compatible with the M29F100.
â SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
â ACCESS TIME: 45ns
â PROGRAMMING TIME
â 8µs per Byte/Word typical
â 5 MEMORY BLOCKS
â 1 Boot Block (Top or Bottom Location)
â 2 Parameter and 2 Main Blocks
â PROGRAM/ERASE CONTROLLER
â Embedded Byte/Word Program algorithm
â Embedded Multi-Block/Chip Erase algorithm
â Status Register Polling and Toggle Bits
â Ready/Busy Output Pin
â ERASE SUSPEND and RESUME MODES
â Read and Program another Block during Erase Suspend
â UNLOCK BYPASS PROGRAM COMMAND
â Faster Production/Batch Programming
â TEMPORARY BLOCK UNPROTECTION MODE
â LOW POWER CONSUMPTION
â Standby and Automatic Standby
â 100,000 PROGRAM/ERASE CYCLES per BLOCK
â 20 YEARS DATA RETENTION
â Defectivity below 1 ppm/year
â ELECTRONIC SIGNATURE
â Manufacturer Code: 0020h
â Top Device Code M29F100BT: 00D0h
â Bottom Device Code M29F100BB: 00D1h
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