SUMMARY DESCRIPTION
The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM.
The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied with all the bits erased (set to â1â).
FEATURES SUMMARY
â Multiple Memory Product
â 1 bank of 32 Mbit (2Mb x16) Flash Memory
â 1 bank of 4 Mbit (256Kb x16) SRAM
â SUPPLY VOLTAGE
â VDDF = VDDS =1.65V to 2.2V
â VPPF = 12V for Fast Program (optional)
â ACCESS TIMES: 85ns, 100ns, 120ns
â LOW POWER CONSUMPTION
â ELECTRONIC SIGNATURE
â Manufacturer Code: 0020h
â Top Device Code, M36DR432AD: 00A0h
â Bottom Device Code, M36DR432BD: 00A1h
FLASH MEMORY
â MEMORY BLOCKS
â Dual Bank Memory Array: 4 Mbit, 28 Mbit
â Parameter Blocks (Top or Bottom location)
â PROGRAMMING TIME
â 10µs by Word typical
â Double Word Program Option
â ASYNCHRONOUS PAGE MODE READ
â Page Width: 4 Words
â Page Access: 35ns
â Random Access: 85ns, 100ns, 120ns
â DUAL BANK OPERATIONS
â Read within one Bank while Program or
Erase within the other
â No delay between Read and Write operations
â BLOCK LOCKING
â All blocks locked at Power up
â Any combination of blocks can be locked
â WPF for Block Lock-Down
â COMMON FLASH INTERFACE (CFI)
â 64 bit Unique Device Identifier
â 64 bit User Programmable OTP Cells
â ERASE SUSPEND and RESUME MODES
â 100,000 PROGRAM/ERASE CYCLES per BLOCK
â 20 YEARS DATA RETENTION
â Defectivity below 1ppm/year
SRAM
â 4 Mbit (256Kb x16)
â LOW VDDS DATA RETENTION: 1.0V
â POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
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