SUMMARY DESCRIPTION
The M36WT864 is a low voltage Multiple Memory Product which combines two memory devices; a 64 Mbit Multiple Bank Flash memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.
The memory is offered in a Stacked LFBGA96 (8 x 14mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to â1â).
FEATURES SUMMARY
â SUPPLY VOLTAGE
â VDDF = 1.65V to 2.2V
â VDDS = VDDQF = 2.7V to 3.3V
â VPPF = 12V for Fast Program (optional)
â ACCESS TIME: 70, 85, 100ns
â LOW POWER CONSUMPTION
â ELECTRONIC SIGNATURE
â Manufacturer Code: 20h
â Top Device Code, M36WT864TF: 8810h
â Bottom Device Code, M36WT864BF: 8811h
FLASH MEMORY
â PROGRAMMING TIME
â 8µs by Word typical for Fast Factory Program
â Double/Quadruple Word Program option
â Enhanced Factory Program options
â MEMORY BLOCKS
â Multiple Bank Memory Array: 4 Mbit Banks
â Parameter Blocks (Top or Bottom location)
â DUAL OPERATIONS
â Program Erase in one Bank while Read in others
â No delay between Read and Write operations
â BLOCK LOCKING
â All blocks locked at Power up
â Any combination of blocks can be locked
â WP for Block Lock-Down
â SECURITY
â 128 bit user programmable OTP cells
â 64 bit unique device number
â One parameter block permanently lockable
â COMMON FLASH INTERFACE (CFI)
â 100,000 PROGRAM/ERASE CYCLES per BLOCK
SRAM
â 8 Mbit (512K x 16 bit)
â EQUAL CYCLE and ACCESS TIMES: 70ns
â LOW STANDBY CURRENT
â LOW VDDS DATA RETENTION: 1.5V
â TRI-STATE COMMON I/O
â AUTOMATIC POWER DOWN
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