DESCRIPTION
The M54HC10 is an high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
â HIGH SPEED:
tPD = 8ns (TYP.) at VCC = 6V
â LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA=25°C
â HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
â SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN)
â BALANCED PROPAGATION DELAYS: tPLH â
tPHL
â WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 6V
â PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 10
â SPACE GRADE-1: ESA SCC QUALIFIED
â 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST
â NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION
â DEVICE FULLY COMPLIANT WITH SCC-9201-107
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