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M93C06-RDS6TG Datasheet - STMicroelectronics

M93C06-RDS6TG Datasheet PDF STMicroelectronics

Part Name
M93C06-RDS6TG

Other PDF
  not available.

page
30 Pages

File Size
205.9 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

SUMMARY DESCRIPTION
These electrically erasable programmable memory (EEPROM) devices are accessed through a Serial Data Input (D) and Serial Data Output (Q) using the MICROWIRE bus protocol.
   
FEATURES SUMMARY
■ Industry Standard MICROWIRE Bus
■ Single Supply Voltage:
    – 4.5V to 5.5V for M93Cx6
    – 2.5V to 5.5V for M93Cx6-W
    – 1.8V to 5.5V for M93Cx6-R
■ Dual Organization: by Word (x16) or Byte (x8)
■ Programming Instructions that work on: Byte,
    Word or Entire Memory
■ Self-timed Programming Cycle with Auto-Erase
■ Ready/Busy Signal During Programming
■ Speed:
    – 1MHz Clock Rate, 10ms Write Time (Current
        product, identified by process identification
        letter F or M)
    – 2MHz Clock Rate, 5ms Write Time (New
        Product, identified by process identification
        letter W)
■ Sequential Read Operation
■ Enhanced ESD/Latch-Up Behaviour
■ More than 1 Million Erase/Write Cycles
■ More than 40 Year Data Retention
   

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM
STMicroelectronics
8K-Bit Microwire Serial EEPROM ( Rev : 2004 )
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2K-Bit Microwire Serial EEPROM
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16 Kb Microwire Serial EEPROM ( Rev : 2013 )
ON Semiconductor
16 Kb Microwire Serial EEPROM ( Rev : 2014 )
ON Semiconductor

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