The MC14012B dual 4âinput NAND gates are constructed with PâChannel and NâChannel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.
Features
⢠Supply Voltage Range = 3.0 Vdc to 18 Vdc
⢠All Outputs Buffered
⢠Capable of Driving Two LowâPower TTL Loads or One LowâPower Schottky TTL Load Over the Rated Temperature Range
⢠Double Diode Protection on All Inputs
⢠PinâforâPin Replacements for Corresponding CD4000 Series B Suffix Devices
⢠These Devices are PbâFree and are RoHS Compliant
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