Insulated Gate Bipolar Transistor NâChannel EnhancementâMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltageâblocking capability. It also provides low onâvoltage which results in efficient operation at high current.
⢠Industry Standard TOâ220 Package
⢠High Speed Eoff: 63 μJ/A typical at 125°C
⢠Low OnâVoltage â 1.7 V typical at 8.0 A, 125°C
⢠Robust High Voltage Termination
⢠ESD Protection GateâEmitter Zener Diodes
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