Insulated Gate Bipolar Transistor NâChannel EnhancementâMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltageâblocking capability. It also provides fast switching charac teristics and results in efficient operation at high frequencies.
⢠Industry Standard TOâ220 Package
⢠High Speed Eoff: 67 J/A typical at 125°C
⢠Low OnâVoltage â 1.7 V typical at 10 A, 125°C
⢠Robust High Voltage Termination
⢠ESD Protection GateâEmitter Zener Diodes
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