Insulated Gate Bipolar Transistor
NâChannel EnhancementâMode Silicon Gate
This IGBT contains a builtâin free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts.
⢠BuiltâIn Free Wheeling Diodes
⢠BuiltâIn Gate Protection Zener Diode
⢠Industry Standard Package (TO92 â 1.0 Watt)
⢠High Speed Eoff: Typical 6.5μJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/μs
⢠Robust High Voltage Termination
⢠Robust TurnâOff SOA
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