HighâCurrent Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.
Features
⢠High DC Current Gain â hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
⢠Curves to 100 A (Pulsed)
⢠Diode Protection to Rated IC
⢠Monolithic Construction with BuiltâIn BaseâEmitter Shunt Resistor
⢠Junction Temperature to +200°C
⢠PbâFree Packages are Available*
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