DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

MJE13003L-F-T92-T Datasheet - Unisonic Technologies

MJE13003L-F-T92-T Datasheet PDF Unisonic Technologies

Part Name
MJE13003L-F-T92-T

Other PDF
  not available.

page
9 Pages

File Size
422.4 kB

MFG CO.
UTC
Unisonic Technologies UTC

DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix0.5 ~ 1.5 Amp, 25 and 100°C
   Typical tC= 290ns @ 1A, 100°C.
* 700V blocking capability

APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits


Part Name
Description
PDF
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

Share Link: 

All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]