Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.   

Features
• Closely Matched Current Transfer Ratios
• Minimum BVCEO of 70 V Guaranteed
   â€“ MOC205M, MOC206M, MOC207M
• Minimum BVCEO of 30 V Guaranteed
   â€“ MOC211M, MOC212M, MOC213M, MOC216M,
      MOC217M
• Low LED Input Current Required for Easier Logic
   Interfacing
   â€“ MOC216M, MOC217M
• Convenient Plastic SOIC-8 Surface Mountable
   Package Style, with 0.050" Lead Spacing
• Safety and Regulatory Approvals:
   â€“ UL1577, 2,500 VACRMS for 1 Minute
   â€“ DIN-EN/IEC60747-5-5, 565 V Peak Working
      Insulation Voltage

Applications
• Feedback Control Circuits
• Interfacing and Coupling Systems of Different
   Potentials and Impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits