DESCRIPTION
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
⢠U.L. Recognized (File #E90700, Volume 2)
⢠VDE Recognized (File #136616) (add option âVâ for VDE approval, i.e, MOCD211V-M)
⢠Minimum BVCEO of 30 Volts Guaranteed
⢠Standard SOIC-8 Footprint, with 0.050" Lead Spacing
⢠Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
⢠High Input-Output Isolation of 2500 VAC(rms) Guaranteed
⢠Compact Dual Channel Optocoupler
APPLICATIONS
⢠Interfacing and coupling systems of different potentials and impedances
⢠General purpose switching circuits
⢠Monitor and detection circuits
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