datasheetq language:
Home >>> Micron >>> MT49H16M16 Datasheet

MT49H16M16 Datasheet

Part NameMT49H16M16(2002) Micron
Micron Technology Micron
DescriptionREDUCED LATENCY DRAM (RLDRAM®)
Other Doc.
MT49H16M16(2002) Datasheet PDF : MT49H16M16 pdf     

Image Info : [Micron] MT49H16M16

GENERAL DESCRIPTION
The Micron® 256Mb Reduced Latency DRAM (RLDRAM) contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) format where the data is provided and synchronized with a differential echo clock signal. RLDRAM does not require row/column address multiplexing and is optimized for fast random access and high-speed bandwidth.
RLDRAM is designed for communication data storages like transmit or receive buffers in telecommunication systems as well as data or instruction cache applications requiring large amounts of memory.

FEATURES
• 2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O
• Cyclic bank addressing for maximum data out bandwidth
• Non-multiplexed addresses
• Non-interruptible sequential burst of two (2-bit
   prefetch) and four (4-bit prefetch) DDR
• Target 600 Mb/s/p data rate
• Programmable Read Latency (RL) of 5-8
• Data valid signal (DVLD) activated as read data is available
• Data Mask signals (DM0/DM1) to mask first and
   second part of write data burst
• IEEE 1149.1 compliant JTAG boundary scan
• Pseudo-HSTL 1.8V I/O Supply
• Internal Auto Precharge
• Refresh requirements: 32ms at 100°C junction
   temperature (8K refresh for each bank, 64K refresh
   command must be issued in total each 32ms)

Share Link : Micron
Language : 한국어   日本語   русский   简体中文   español
@ 2015 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]