N0601N-ZK-E1-AY Datasheet - Renesas Electronics
Part Name
N0601N-ZK-E1-AY
Description
Other PDF
not available.
PDF
page
8 Pages
File Size
194.1 kB
MFG CO.
Renesas Electronics
Description
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance
Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
ID(DC) = ±100 A
• RoHS Compliant
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Part Name
Description
PDF
MFG CO.
N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
NEC => Renesas Technology
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