General Description
This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage apllications such as DC motor control and DC/DC conversion where fast switching,low in-line power loss, and resistance to transients are
needed.

Features
• -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V
                    RDS(on) = 0.19 Ω @ VGS = -2.7 V
                    RDS(on) = 0.20 Ω @ VGS = -2.5 V.
• High density cell design for extremely low RDS(on).
• High power and current handling capability in a widely used surface mount package.
• Dual MOSFET in surface mount package.